db3/DB4 siyu r silicon bidire ctional diac features ? low reverse leakage ?? high forward surge capability o?? high temperature soldering guaranteed: 260 /10 , 0.375" (9.5mm) ?? 260 /10 seconds, 0.375" (9.5mm) lead length, ?? 5 (2.3kg) 5 lbs. (2.3kg) tension mechanical data : terminals: plated axial leads ? : mounting position: any ???rohs? lead and body according with rohs standard ??? dachang electronics ? ( limiting values ) symbols p c i trm t stg parameters power dissipation repetitive peak on-state current storage temperature t a =50 tp=10us f=100hz value db3/DB4 mw a 150 2.0 -40 to +125 (electrical characteristics) v bo breakover voltage [note 2 ] value db3 test conditions i+v bo i- i-v bo i ?? dynamic breakover voltage [note 1 ] output voltage [note 1 ] breakover current [note 1 ] rise time [note 1 ] leakage current [note 1 ] i vi v o i bo tr i b c=22nf [note 2 ] see diagram 1 c=22nf [note 2 ] see diagram 1 i=[ i bo to if=10ma ] see diagram 1 see diagram 2 c=22nf [note 2 ] see diagram 3 see diagram 1 v bbo =0.5v max min typ max max min min max typ max v ua us ua v v v 3 5 5 100 1.5 10 28 36 32 unit ?? ?? unit symbols parameters ? breakover voltage symmetry ??? ? ? ? t j 0 perating junction temperature -40 to +100 notes:1.electrical characteristics applicable in both forward and reverse directions. 2.connected in parallel with the devices. peak current [note 1 ] i p see diagram 2 (gate) min a 0.3 ? do-35 glass unitmm DB4 35 45 40
siyu r dachang electronics +i f 10ma i bo i b -v -i f v bo +v v 0.5v bo 500k 10k 200v 50hz 0.1f d.u.t vo r=20 tr 10% 90% ip diagram 1: current-voltage characteristics dia gram 2: test circuit for output voltage diagram 3: test circuit see diagram 2 10 100 1000 10000 0.01 0.1 1 2 tp[ s ] f=100hz t j initial=25 tamb [ ] p [mw] 160 140 120 100 80 60 40 20 0 010 20304050 60708090100110120130 fig.1-power dissipation versus ambient temperature ( maximum values ) fig.2-peck pulse current versus pluse duration ( maximum values ) db3/DB4
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